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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD5703 DESCRIPTION *High Breakdown VoltageVCBO= 1500V (Min) *High Switching Speed *Low Saturation Voltage APPLICATIONS *Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE UNIT 1500 V 800 V 6 V 10 A 30 A 70 W .cn mi e IC Collector Current- Continuous IC Collector Current- Pulse Collector Power Dissipation @ TC=25 PC TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD5703 TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 1.6A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 1.6A B 1.5 V ICES Collector Cutoff Current VCE= 1400V; VBE= 0 1 mA ICBO Collector Cutoff Current VCB= 800V; IE= 0 10 A ICBO Collector Cutoff Current VEB= 4V; IC= 0 hFE-1 DC Current Gain IC= 1A; VCE= 5V hFE-2 DC Current Gain tf Fall Time w w w. IC= 8A; VCE= 5V IC= 6A, IB1= 1.2A; IB2= -2.4A; VCC= 200V; RL= 33.3 sem isc .cn i 15 5.3 1 mA 40 7.3 0.3 s isc Websitewww.iscsemi.cn 2 |
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